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臧航
[2013-03-12 ]   点击量:


臧航

博士,核技术应用方向讲师,硕士研究生导师。20153月前往美国西北太平洋国家实验室开展为期1年的访问学者研究。
主要研究方向为裂变及聚变环境下材料的辐照损伤,载能粒子与材料相互作用,材料的离子束辐照效应及辐照改性研究等。

联系方式:

zanghang@mail.xjtu.edu.cn

地址:西安市咸宁西路28号,西安交通大学,北二楼715

主持基金:

目前主持国家自然科学基金1项,教育部博士点基金1项,国家重点实验室课题1项,陕西省自然科学基金1项,曾获国家博士后基金一等资助和陕西省博士后基金一等资助。














 

 

 

 


 


主要论文:

[1] Daxi Guo, Hang Zang(通讯作者) et al. Preliminary studies on the emulation of 14MeV neutron irradiation in SiC with heavy ions [J], Fusion Engineering and Design, 2015, 已接收

[2] Tao Yang, Hang Zang(通讯作者), Chaohui He, Daxi Guo et al. Evaluation of mechanical properties variations for Kr ion-irradiated 6H-SiC by Nanoindentation methods [J]. International Journal of Ceramic Technology, 2015, 12(2): 390-398 (SCI: CD4JZ)

[3] Jianqi Xi, Peng Zhang, Chaohui He, Hang Zang, Daxi Guo, Tao Li, The role of point defects in the swelling and elastic modulus of irradiated cubic silicon carbideNuclear Instruments and Methods in Physics Research B, 356 · JULY 2015

[4] Daxi Guo, Chaohui He, Hang Zang et al. Re-evaluation of neutron displacement cross sections for silicon carbide by a Monte-Carlo approach [J]. Journal of Nuclear Science and Technology, 2015, DOI: 10.1080/00223131.2015.1028502(SCI收录源刊,已录用)

[5] Daxi Guo, Hang Zang, Peng Zhang et al. Analysis of primary damage in silicon carbide under fusion and fission neutron spectra [J]. Journal of Nuclear Materials, 2014, 455: 229-233
(SCI: AZ1MR)

[6] Daxi Guo, Ignacio Martin-Bragado, Chaohui He, Hang Zang et al. Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation [J]. Journal of Applied Physics, 2014, 116: 204901 (SCI: AU5IM)

[7] Jianqi Xi, Peng Zhang, Chaohui He, Mingjie Zheng, Hang Zang, Daxi Guo et al. Evolution of defects and defect clusters in β-SiC irradiated at high temperature [J]. Fusion Science and Technology, 2014, 66: 235-244 (SCI:AN1MX)

[8] Wenbo Liu, Chi Zhang, Yanzhou Ji, Zhigang Yang, Hang Zang, Tielong Shen, Long-Qing Chen, Irradiation-induced grain growth in nanocrystalline reduced activation ferrite/martensite steel, Applied Physics Letters 09/2014; 105(12):121905. [9] Hang Zang, Daxi Guo, Tielong Shen, Chaohui He, Zhiguang Wang, Lilong Pang, Cunfeng Yao, TaoYang, Investigation of Swelling Induced by Heavy Ion and Neutron Irradiation in SiC, Journal of Nuclear Materials, 433(2013)378-381,

[10] Hang Zang, Tao Yang, Daxi Guo, Jianqi Xi, Chaohui He, Zhiguang Wang, Tielong Shen, Lilong Pang, Cunfeng Yao, Peng Zhang,Modifications of SiC under High FluencKr-Ion Irradiation at different temperatures [J]. Nuclear Instruments and Methods in Physics Research B, 2013, 307: 558-561 (SCI: 182DP) [11] Jianqi Xi, Chaohui He, Hang Zang, Daxi Guo, Tao Yang, Tao Bo, Peng Zhang,Evolution of atoms with special coordination number in β-SiC with temperature [J]. Journal of Nuclear Materials, 2013, 435:236-240(SCI: 115QV)

[12] 郭达禧,贺朝会,臧航等.GEANT4模拟中子在碳化硅中产生的位移损伤[J].原子能科学技术,201347(7)1222~1228 (EI: 20133516679425)

[13] Wang Zhiguang, Zang Hang, Wei Kongfang, Sun Jianrong, Yao Cunfeng, Shen Tielong, Ma Yizhun,Pang Lilong, Zhu Yabin, Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films, Nucl.Instr. and Meth. B 269(2011)837-841(SCI: 758UF)

[14] Zang H, Wang Z G,Pang L L , Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B,Raman investigation of ion-implanted ZnO films, ACTA PHYSICA SINICA, 59 (2010) 4831- 4836(SCI:629BJ) [15] 臧航,王志光,魏孔芳,孙建荣,姚存峰,申铁龙,马艺准,杨成绍,庞立龙,朱亚斌,80 keV氮离子注入对ZnO 薄膜结构的影响研究,原子核物理评论,第27卷,87-91页,2010

[16] Xingping Peng, Hang Zang, Zhiguang Wang, Xingping Peng and Yinyue Wan, Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering, Journal of Luminescence, 2008,128 (3):328-332 (SCI:254DJ)

[17] Xingping Peng, Jinzhang Xu, Hang Zang, Boyu Wang and Zhiguang Wang, Structural and PL properties of Cu-doped ZnO films, Journal of

Luminescence 2008, 128(3):297-300. (SCI: 254DJ)

[18] Liu C B, Wang Z G, Zang H, Song Y, A Benyagoub,M Toulemonde, Wei K F, Jin Y F, Yao C F, Sheng Y B,Ma Y Z, Investigation of PL properties

of C-doped SiO2 thin films after high energy Pb ion irradiation, Chinese Physics C 32 (2008) 251-254. (SCI: 388CQ)

[19] Wang Z G, Liu C B, Zang H, Wei K F, Yao C F, Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation, Journal of the Korean

Physical Society,55(2009)2705-2707.(SCI: 534ED)

[20] Wei K F, Wang Z G, Liu C B, Zang H, Yao C F, Sheng Y B, Ma Y Z, Song Y, Lu Z W, Modification of Fe/Cu multilayers under 400 keV Xe20+

irradiation. Chinese Physics C 32 (2008) 262-264. (SCI: 388CQ)


   


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